Author Affiliations
Abstract
National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiNx instead of SiO2 are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiNx passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5×105 and low dark current density of 0.88 μA/cm2 at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.
040.1345 Avalanche photodiodes (APDs) 040.7190 Ultraviolet 040.6070 Solid state detectors Chinese Optics Letters
2018, 16(6): 060401
1 中国电子科技集团公司第十三研究所, 河北 石家庄 050051
2 天津大学电子信息工程学院, 天津 300072
随着集成光路和全光网络技术的发展，基于环形光谐振器结构的半导体环形激光器日益受到人们的关注，成为近年来集成光学领域的研究热点之一。设计制备了一种双直波导耦合输出半导体环形激光器,并进行了相应测试。该器件环形谐振腔波导宽度3.4 μm，环形腔半径349 μm，直波导与环形腔耦合间距1.0 μm，其阈值电流为36 mA，自由光谱范围(FSR)为0.33 nm，61 mA下激射光谱的中心波长为1566.66 nm，用光纤对准直波导口，测得直波导耦合光功率输出达到40 μW。通过该器件的光功率电流特性曲线，明显观测到了半导体环形激光器的双向工作、单向双稳态工作及交替振荡工作状态，并分析了在单向双稳态工作时，激射方向和非激射方向的光谱特性。
半导体激光器 环形谐振腔 低阈值 集成探测器 单向双稳态 光学学报
2010, 30(s1): s100217
